摘要
在AlN压电薄膜上(以SiO2/Si为衬底),使用MOS集成电路工艺制作叉指电极和单元电路,制成中心频率为320MHz的有源SAW滤波器并进行了测试。结果表明,该滤波器的插入损耗低于10dB,带外衰减高于45dB。
Fabricated the interdigitated electrodes and the circuit elements via the MOS IC processing on AIN piezoelectric thin film, the active surface acoustic wave （SAW） filter was produced and studied, which centre frequency was 320 MHz. Results show it＇s insertion loss is smaller than 10 dB, and above 45 dB the decay is in out of the band.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第11期35-37,共3页
Electronic Components And Materials
基金
贵州省自然科学基金资助项目(黔科合计20043028)
关键词
电子技术
AIN压电薄膜
叉指换能器
有源SAW滤波器
electron technology
AIN piezoelectric thin film
interdigitated transducer
active surface acoustic wave filter
