化学气相沉积法中SnO_2一维纳米结构的控制生长

Controllable preparation of SnO_2 one-dimensional nanostructures by chemical vapor deposition

以Sn和SnO为源材料,化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件,实现了SnO2一维纳米结构的控制生长,成功获得各种不同横向尺度的SnO2纳米线、纳米带以及直径连续变化的针状纳米结构.通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征,认为高温生长点附近锡与氧的相对含量是控制SnO2一维纳米结构生长的关键因素;并在此基础上对SnO2一维纳米结构的生长机理进行了深入的讨论.

Using Sn and SnO powder as source material,SnO2 one-dimensional nanostructures（nanowires,nanorods,nanobelt and nanoneedles）with controllable diameters were successfully prepared by chemical vapor deposition.The nanostructure and morphology of the products depend strongly on the proportion of oxygen in the growth chamber,which can be altered by adjusting the proportion of SnO in the source material or the proportion of oxygen in the carrier gas.It is crucial to adjust the relative contents of Sn and O atoms in the region of high temperature growth of the Si wafer during controlled preparation of SnO2 one-dimensional nanostructures.We will also discuss the growth mechanism of SnO2 one-dimensional nanostructures under different growth conditions.