摘要
以多孔阳极氧化铝膜(porous anodic alumina,PAA)为基片,采用真空电子束蒸发的方法在多孔氧化铝膜上制备了高度有序度的Sn纳米点阵列.锡纳米点阵的XRD与块体锡的完全相同,扫描电镜(SEM)测试结果表明,所制备的金属Sn纳米点阵与阳极氧化铝膜的多孔阵列具有完全相同的有序结构,阵列中每个Sn纳米粒子的形状为球形的,其直径接近于PAA膜的孔直径.对Sn纳米点阵形成过程和形成机理进行了讨论.
Highly ordered metal Sn nanodot arrays were prepared by vacuum electron beam evaporation using porous anodic alumina(PAA)membrane as the substrate.They were characterized by means of scanning electron microscopy(SEM)and X-ray diffraction(XRD).SEM images indicated that the Sn nanodot arrays are highly ordered and coincid with the contours of porous anodic alumina.The shape of Sn nanodot is spherical and the diameter approximates the pore diameter of the PAA membrane.XRD showed that crystallographic structures of Sn nanodot arrays are the same as the bulk Sn.The forming process and mechanism of the Sn nanodot array was discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第11期6712-6716,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60277003)
西安交通大学在职博士基金(批准号:90.071263)
西安市工业攻关项目(批准号:GG06056)资助的课题.~~