摘要
从量子力学出发利用变分原理采用尝试波函数,探讨了不同情况下卤化银微晶中掺杂中心的势阱深度和捕获半径之间的对应关系。利用得出的结论估算了室温下浅电子陷阱掺杂剂[Fe(CN)6]4-引入的电子陷阱捕获截面为70 A2,而掺杂剂[IrBr6]3-引入的电子陷阱势阱深度为1.07eV。
The trail wave function was adopted with variational principle. The coincidence relation between potential well depth and trapping radius of dopant center in silver halide microcrystal was discussed in defferent condition. A trapping cross-sections of 70 A^2 for [ Fe （CN） 6 ]^ 4- and a trap depth of 1.07eV for [ IrBr6 ]^ 3 - were estimated by the drown conclusion at room-temperature.
出处
《信息记录材料》
2007年第6期8-11,共4页
Information Recording Materials
关键词
变分原理
电子陷阱
陷阱深度
捕获截面
variational principle
electron trap
trap depth
trapping cross section
