摘要
采用纳米二氧化硅(SiO_2)作空间稳定剂,通过苯胺的原位分散聚合在玻璃表面直接制备PANI-SiO_2透明导电纳米复合膜。薄膜的表观形态和组成通过扫描电镜(SEM)、红外光谱分析(FTIR)、紫外可见光谱分析(UV-Vis)进行了表征。结果发现,薄膜的形成经历了成核、生长、生长饱和3个明显的过程,薄膜表面光滑致密,膜厚在3～300 nm;SiO_2对薄膜表面质量有良好改善作用,对薄膜的导电率稍有影响。此外对成膜机理进行了讨论。
Conducting and transparent nanometer PANI-SiO2 films were prepared via insitu dispersion polymerization of aniline on glass surfaces, using nanometer silicon dioxide as stabilizer. The film morphology and composition were characterized by FTIR, UV-Vis, and SEM. The results show that the growth of PANI-SiO2 films undergoes three stages： adsorption nucleation, growth and growth saturation. Dense and smooth films with thickness in the range of 3-300 nm exhibit a distinct improvement on the surface quality of the films. The presence of SiO2 in the film shows only a slight influence on the electrical conductivity of PA- NI-SiO2 films composite. The formation mechanism of the PANI-SiO2composite films is also discussed.
出处
《现代塑料加工应用》
CAS
北大核心
2007年第5期1-4,共4页
Modern Plastics Processing and Applications
基金
国家自然科学基金(50390090)
关键词
原位分散聚合
聚苯胺
纳米二氧化硅
薄膜
成膜机理
in-situ dispersion polymerization
polyaniline
nanometer silicon dioxide
film
formation mechanism
