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GaN HFET的性能退化 被引量：2

Performance Degradations in GaN HFET
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摘要 在综述大功率AlGaN/GaN HFET性能退化实验结果的基础上,研究了器件退化与电流崩塌间的关联。分析了现有各类器件失效模型的优点和不足之处。通过沟道中强电场和热电子分布的研究,完善了热电子触发产生缺陷陷阱的器件退化模型。使用这一模型解释了实验中观察到的各类性能退化现象,指出优化设计异质结构可以有效减弱GaN HFET的性能退化。最后提出减弱器件性能退化的方法和途径。 From analyzing the experiments for performance degradation in A1GaN/GaN HFET, the relationship between degradation and current collapse was investigated. The merits and deficiencies for various degradation mechanisms were analyzed and compared. Through the investigation for electric field and hot electron profile in channel, a degradation mechanism of traps induced by hot electrons at high electric field was perfected. Various performance degradations observed in experiments are explained by using this degradation mechanism, from which a new design to weaken the performance degradation in GaN HFET through optimization of heterostructure is established. At last various means to improve the reliability of GaN HFET were proposed .
作者 薛舫时
机构地区 南京电子器件研究所单片集成电路与模块国家级重点实验室
出处 《微纳电子技术》 CAS 2007年第11期976-984,1007,共10页 Micronanoelectronic Technology
关键词 GaNHFET 性能退化 退化机理 沟道中的强场峰 热电子 能带剪裁 极化电荷 电流崩塌 GaN HFET performance degradation degradation mechanism high electric field peak in channel energy band tailoring
分类号 TN386 [电子电信—物理电子学] TN304.23 [电子电信—物理电子学]
  • 相关文献

参考文献29

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二级参考文献31

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共引文献14

同被引文献37

  • 1薛舫时.GaN HFET沟道中的电子态转换和沟道右势垒剪裁[J].中国电子科学研究院学报,2006,1(6):487-491. 被引量：4
  • 2薛舫时.氮化物异质结电子气的二维特性和迁移率[J].固体电子学研究与进展,2007,27(1):1-6. 被引量：14
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微纳电子技术
2007年 第11期

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