含萘基的光抗蚀剂超薄膜的显影和光分解性质的研究

Development and photo-decomposition of photoresist containing naphthyl in ultrathin nanosheets

用LB膜技术将以十二烷基甲基丙烯酰胺（DDMA）为成膜物质，以甲基丙烯酸-β-萘酯（NPMA）为光敏感物质的共聚物（pDDMA-NPMA）在石英等基片上制成超薄膜，并用石英晶体微天平（QCM），AFM，FTIR对其显影过程及光分解机理进行了初步探讨。实验结果表明，光照前，pDDMA-NPMA薄膜对超纯水和四甲基氢氧化铵稳定，但能溶解于丙酮溶液中。用深紫外光照射后的样品，对超纯水稳定，但可在四甲基氢氧化铵显影，且显影效率随显影剂浓度的增大而增大。当用深紫外光连续照射时，在辐照的初期，共聚物中的萘被光诱导而发生拓扑化学反应，即光二聚，随着光照时间的增长，聚合物分子的主链和侧链发生氧化分解反应，生成易挥发的链碎片。

A novel polymer containing photoactive naphthyl group, poly （N-dodecylmethacrylamine β-naphtylme- thacrylate） （pDDMA-NPMA） was synthesized and prepared in ultrathin film. The development and photoreaction of the polymer were investigated by quartz crystal microbalance （QCM）, atomic force microscopy and Flouried transform infrared spectroscopy. Tetramethyl ammonium hydroxide （TMAH） is a good developping reagent for the polymer p （DDMA-NPMA）. Upon deep UV irradiation, photochemical reaction occurred in ultrathin films and the irradiated parts could be eliminated. The results showed that the main route of the photoreaction was dimerization of the naphthylene, and then photo-decomposition of not only naphthyl group but main chains of polymer.