无反应直流溅射中功率对ZnO：Al薄膜光电性能与形貌的影响

Influence of power on the properties and morphology of ZnO：Al films grown by non-reactive DC magnetron sputtering

采用氧化锌铝陶瓷靶材，在室温下使用无氧直流磁控溅射法于载玻片衬底上制备了ZnO：Al透明导电薄膜，研究了溅射功率对薄膜微观结构、电阻率和透光率的影响。结果表明：薄膜具有六方纤锌矿结构并沿C轴择优取向生长，沉积速率与溅射功率呈准线性关系。溅射功率对薄膜的电阻率和表面形貌有显著影响，当功率为80w和120w时，薄膜的电阻率值为7．2×10^-3Ω·cm和2．3×10^-3Ω·cm，表面形貌分别为光滑与织构化,但溅射功率对薄膜的透光率影响不大，薄膜在可见光区的平均透光率均在90％左右。

ZnO：Al thin films based on alumina doped ZnO ceramic target were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature. The structural, electrical and optical properties of the films with various sputtering powers were characterized by XRD, SEM, four-point probe and spectrophotometer. The experimental results show that the films are polycrystalline with hexagonal crystal structure and have a strongly preferred orientation of c-axis. The quasi-linear relationship found between sputtering power and deposition rate. The resistivity of films is 7.2×10^-3Ω.cm and 2.3×10^-3Ω.cm at 80W and 120W, but the surface morphology is smooth and textured respectively. However, the sputtering power has a little effect on the average transmittance, which around 90% in the visible region.