锰掺杂对PMN-PZT陶瓷介电性能的影响

Effect of Mn doping on dielectric properties of PMN-PZT ceramics

研究了锰掺杂对富锆PMN-PZT（铌镁酸铅一锆钛酸铅）陶瓷材料的相组成、微观结构、介电性能等方面的影响，并对实验结果作出物理机理的解释。实验结果表明：适量的锰掺杂有助于陶瓷晶粒的生长，并能有效地降低PMN-PZT陶瓷材料的介电常数和介电损耗，在锰掺杂量为3．0％（原子分数）时，εr：197、tanδ=0．15％，作为用于红外热释电探测器的陶瓷材料具有良好的介电性能。

The effect of Mn doping on the phase composition, microcosmic configuration, and the dielectric properties of Zr-rich PMN-PZT ceramics was investigated in details, and the physical mechanism aiming at the results of the experiments was explained. The results show that the proper amount of manganese-doping not only contributes to the growth of ceramic grain, but also can reduce dielectric constant and dielectric loss of PMN-PZT ceramics effectively.The dielectric properties of the ceramics with 3.0at%Mn doping are εr：197,tanδ=0.15% respectively.It is most suitable for fabricating pyroelectric infrared detection.