摘要
二氧化硅是目前IC生产中应用最广泛的层间介质，为满足光刻的要求，必须采用化学机械抛光（CMP）工艺对介质表面进行平整化加工，分析了二氧化硅介质CMP机理过程，指出了磨料是影响去除速率及表面状态的关键因素，并以自制纳米二氧化硅水溶胶配制抛光浆料进行CMP实验研究，采用这种高浓度、易清洗、低分散度的硅溶胶纳米磨料达到了较高的去除速率和较好的表面状态，有效地减少了表面划伤。另外还分析了磨料粒径、浓度及浆料的流速对CMP的影响，并且对浆料中加入的表面活性剂的作用进行了讨论。
Silica is one of the most widely used materials in IC manufacture. In order to meet the photo-etching requirement, the dielectric surface must be planarization processing by using chemical mechanical polishing （CMP） method. In this paper, the CMP mechanism of silica dielectric was analyzed, and it was found that abrasive was one of the key factors influencing the removal rate and surface state. The CMP experiment was processed through taking self-made nano silica sol as abrasive. Through using such high concentration, easy cleaning and low dispersion silica sol abrasive, we got the higher removal rate and preferable surface state, and reduced the surface scratch. Otherwise, the influence of abrasive particle size, concentration and slurry flow on CMP was analyzed, and the surfactant function in slurry was discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A02期881-884,共4页
Journal of Functional Materials
基金
天津市科技攻关重点资助项目（043801211）
高校博士点基金资助项目（20050080007）
国家自然科学安全联合基金资助项目（10676008）.
关键词
化学机械抛光
纳米磨料
粒径
浓度
去除速率
Chemical mechanical polishing （CMP）
Nano abrasive
Particle size
Concentration
Removal rate
