Fe3O4缓冲层对CoFe2O4薄膜磁性能的影响

Effect of Fe3O4 underlayer on magnetic properties of CoFe2O4 films

采用射频磁控溅射在基片Si（100）和Fe3O4（20nm）/Si（100）上制备了钴铁氧体（CoFe2O4）薄膜，制备的薄膜在空气气氛中进行300～1000℃的退火处理，采用XRD、VSM分析了薄膜的微结构以及磁性能。结果表明，制备的钴铁氧体薄膜均具有尖晶石结构，Fe3O4缓冲层薄膜促进了钴铁氧体薄膜的结晶，但降低了钴铁氧体薄膜的垂直各向异性和垂直于膜面方向的矫顽力，而钴铁氧体薄膜的磁化强度和矩形度得到了一定的提高。

Cobalt ferdte （CoFe2O4） thin films were prepared on Si（100） and Fe3O4（20nm）/Si （100）by RF magnetron sputtering. The prepared films were annealed from 300 to 1000℃ in air. X-ray diffraction（XRD）, vibrating sample magnetometer（VSM） were used to analysed the microstructure and magnetic properties of the films. Results show that cobalt ferrite thin films have spinel structure, and the Fe3O4 underlayer promotes the crystallization of cobalt ferrite film while decreasing the perpendicular anisotropy and the out-of-plane coercivity of cobalt ferrite films, but the magnetization and remanence ratio of the films are improved.