一维硅锗纳米复合材料的制备及在场效应晶体管中的应用

Preparation and application in nanoscale field effect transistors of one-dimensional SiGe nanoscale materials

一维硅锗纳米复合材料，主要包括硅锗纳米线异质结与纳米管，具有优异的电学、光学等性能，易与现代以硅为基础的微电子工业相兼容，所以在纳米器件等领域得到了广泛重视。总结了一维硅锗纳米复合材料的研究现状和相关的制备方法，重点评述了在纳米场效应晶体管中的应用，并对其研究前景做了展望。

Great interest has been devoted to one-dimensional SiGe nanoscale materials including SiGe nanowire heterostructures and nanotubes for the preparation of nanoscale devices owing to the excellent electrical and optical properties and the good compatibility with the present silicon-based micro-electronics industry. The recent development and the related preparation methods of one-dimensional SiGe nanoscale materials were reviewed in the paper. The application of one-dimensional SiGe nanoscale materials in the field of nanoscale field effect transistors has been introduced in detail and the development of one-dimensional nanoscale materials is also discussed in the paper.