电化学原子层外延制备Bi—Se系薄膜

Deposition of Bi-Se system films by electrochemical atomic layer epitaxy

采用电化学原子层外延（electrochemical atomic layer epitaxy，ECALE）方法尝试在Pt电极上沉积Bi2Se3纳米热电薄膜。利用循环伏安扫描研究了Bi^3＋、Se^4＋在Pt电极上的欠电势沉积参数，在此基础上利用自动电沉积系统交替沉积400个Bi、Se原子层。采用电量分析、XRD、EDX对沉积物进行表征。电量分析表明沉积物中存在硒的富余，XRD结果表明沉积物中除了Bi2Se3化合物外还有单质Se的富余。EDX分析沉积物的硒铋原子比为4：1，与XRD分析结果一致。

ECALE was used to deposit Bi-Se nanofilm on Pt electrode in the paper. UPD behavior of Bi and Se on Pt electrode was characterized by cycle voltammetry, and a film was grown with alternative Bi and Se deposition for 400 cycles. Coulometic integration, XRD and EDX were performed to characterize the deposition, coulometic integration shows that selenium is superfluous than the proportion of Bi2Se3, and a 4 L 1 ratio of Se and Bi was detected by the EDX result. Furthermore, there are Bi2Se3 and selenium peaks in the XRD pattern, which is in consistence with the results of EDX and coulometic analysis.