蓝宝石衬底化学机械抛光的机理研究

Study on chemical mechanical polishing mechanics of sapphire substrate

利用磨料为SiO2的碱性抛光液对蓝宝石衬底材料进行了化学机械抛光，并对蓝宝石衬底化学机械抛光（简称CMP）的机理进行了深入的研究，指出了蓝宝石CMP的主要的动力学过程，并详细分析了影响各动力学过程的诸要素。结果表明，蓝宝石衬底的CMP过程是一个复杂的多相反应过程，是化学作用与机械作用互相加强和促进的过程，影响它的各要素间既相互促进，又相互制约。

The chemical mechanical polishing of sapphire substrate was processed by means of alkali slurry with SiO2 abrasive. The mechanics of sapphire substrate CMP were analyzed deeply. The main kinetics processing was pointed out, and the factors of influencing the different kinetics processing were discussed in detail. The result indicated that the CMP processing of sapphire substrate was a complex polyphase reaction, which was a mutual enhance and acceleration processing between chemical function and mechanical function. The factors which influence the two processing enhance and control each other.