直流磁控溅射制备PbTe薄膜

Fabrication of PbTe films by DC magnetron sputtering

采用直流磁控溅射的方式，用PbTe靶材溅射沉积在玻璃基底上得到了PbTe薄膜，薄膜生长速率约为100nm／min，通过控制溅射时间可沉积几纳米到几微米的不同厚度的薄膜。PbTe薄膜是面心立方结构的纤维状生长的薄膜，溅射沉积时间对薄膜的晶粒大小和结构有较大影响，溅射时间越长薄膜的晶粒越大，薄膜结构越致密，具有片层状结构。得到的PbTe薄膜是富Te的P型半导体薄膜，其电阻率随着薄膜厚度的增大而减小。

PbTe films were fabricated on the bases of glass by DC magnetron sputtering. The growth rate of PbTe films is about 100nm/min in the condition of this paper. And vary thickness films could be acquired from several nanometer to several micron via altering sputtering time. The structure of PbTe films was fibriform with face-centered lattice. The structure and size of grains is influenced by the sputtering times. It can be observed that more sputtering time more greatness of the grains and more dense of films＇ structure and sandwich is observed in the film. The PbTe film is p-type semiconductor film because of it is rich in Te element, and the resistivity will decrease along with the films＇ thickness increasing.