Ga掺杂Zn4Sb3体系热电性能的研究

Thermoelectric properties of Ga-doped Zn4Sb3 system

首先在5-310K温度范围内，研究了Ga替代对化合物（Zn1-xGax）4Sb3的低温热电性能的影响。研究发现相对于无掺杂的Zn4Sb3，（Zn1-xGAx）4Sb3（x≠0）的低温热导率明显减小，而且随着Ga替代量的增加而不断减小。另外，轻掺杂条件下（X≤0．15），掺杂后的电阻率和热电势都减小．而随后对β-Zn4Sb3和β-（Zn0.85Ga0.15）4Sb3的高温（300-670K）热电性能进行了测量，结果充分表明合适量的Ga替代Zn（比如x=0．15），可以优化β-Zn4Sb3的高温热电性能。

In this paper, the effect of Ga substitution on thermoelectric properties of （Zn1-xGax）4Sb3 were firstly investigated at the temperatures from 5K to 310K. The results indicated that low-temperature （T〈300K） thermal conductivity of the doped β-（Zn1-xGax）4Sbs （x≠0） reduced remarkably as compared to that of Zn4Sb3, and decreased monotonously with increasing Ga content x. Meanwhile, DC electrical resistivity and thermopower of the lightly doped compounds （x≤0.15） became smaller than that of un-doped Zn4Sb3. In addition, high-temperature thermoelectric properties of β-Zn4Sb3 and β-（Zn0.85Ga0.15）4Sb3 were investigated. The results indicated that proper Ga doping （such as x=0.15） is a promising way to improve the high-temperature thermoelectric performance of β-Zn4Sb3.