Yb填充量对I-型笼合物YbxBa8-xGa16Ge30电传输性能的影响

Effect of Yb filling fraction on electrical transport properties of typy-I YbxBa8-xGa16Ge30 clathrates

采用高温熔融结合SPS烧结工艺制备了Yb／Ba复合填充的I-型笼合物YbxBa8-xGa16Ge30（x=0，0．5，0．7，1．0），研究了Yb的填充量对电传输性能的影响规律。结果表明，随着Yb填充量的增加，YbxBa8-xGa16Ge30化合物的电导率先升高后降低，当x=0．7时，电导率达到最高值；Seebeck系数随着X的增加逐渐降低，在所有样品中，YbxBa8-xGa16Ge30化合物的功率因子最大，在950K时达到1．67×10^-3W/m．K^2左右，比未填充Yb的Ba8Ga16Ge30化合物提高了近75％。

The I-type YbxBa8-xGa16Ge30（x= 0, 0.5, 0.7, 1.0） compounds were synthesized by melting reaction method combined with spark plasma sintering （SPS）. Effect of Yb filling fraction on electrical transport properties of the compounds were investigated. Research results indicate that： The electrical conductivity of the compounds increases at first and then decreases with the increase of filling fraction, when x=0.7, it reaches maximum; The Seebeck coefficient is decreases gradually with the increase of Yb filling fraction. In all YbxBa8-xGa16Ge30 compounds, YbxBa8-xGa16Ge30 compound has the greatest power factor P, and its maximal power factor reaches 1.67×10^-3W/m.K^2 at about 950K. Compared with the unfilled sample, P increases by 75% at the same temperature.