用于HIT太阳能电池的本征非晶硅薄膜

Intrinsic amorphous silicon thin-layer for HIT solar cells

带本征薄层的异质结（HIT）太阳能电池要求本征非晶硅薄膜具有生长速率低，暗电导大，光学带隙宽的特点。采用等离子增强化学气相沉积（PECVD）制备符合HIT太阳能电池要求的本征非晶硅薄膜，并通过分析薄膜的透射光谱，采用Tauc法计算了薄膜的光学带隙，为约1．87eV，衬底温度为180℃，放电功率为80W时获得的薄膜性能最佳。

Intrinsic amorphous silicon thin film should have a low growth rate, high dark conductivity and wide optical bandgap when applied to heterojunction with intrinsic thin-layer （HIT） solar cells to obtain better characteristics. Plasma enhanced chemical vapor deposition （PECVD） is used to prepare the intrinsic amorphous silicon thin-layer for HIT solar cells The optical bandgap, which is about 1.87eV, is obtained through Tauc method based on transmission spectra of samples. The substrate temperature and discharge power are optimized at 180℃ and 80W respectively.