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Measurement of D(d,p)T Reaction Cross Sections in Sm Metal in Low Energy Region (10 ≤ Ed ≤20 keV)

Measurement of D(d,p)T Reaction Cross Sections in Sm Metal in Low Energy Region (10 ≤ Ed ≤20 keV)
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摘要 To study the screening effect of nuclear reactions in metallic environments, the thick target yields, the cross sections and the experimental S(E) factors of the D(d, p)T reaction have been measured on deuterons implanted in Sm metal at 133.2K for beam energies ranging from 10 to 20 ke V. The thick target yields of protons emitted in the D(d, p)T reaction are measured and compared with those data extrapolated from cross sections and stopping power data at higher energies. The screening potential in Sm metal at 133.2K is deduced to be 520±56eV. As compared with the value achieved in the gas target, the calculated screening potential values are much larger. This screening potential cannot be simply interpreted only by the electron screening. Energy dependences of the cross section σ(E) and the experimental S(E) factor for D(d,p)T reaction in Sm metal at 133.2K are obtained, respectively. To study the screening effect of nuclear reactions in metallic environments, the thick target yields, the cross sections and the experimental S(E) factors of the D(d, p)T reaction have been measured on deuterons implanted in Sm metal at 133.2K for beam energies ranging from 10 to 20 ke V. The thick target yields of protons emitted in the D(d, p)T reaction are measured and compared with those data extrapolated from cross sections and stopping power data at higher energies. The screening potential in Sm metal at 133.2K is deduced to be 520±56eV. As compared with the value achieved in the gas target, the calculated screening potential values are much larger. This screening potential cannot be simply interpreted only by the electron screening. Energy dependences of the cross section σ(E) and the experimental S(E) factor for D(d,p)T reaction in Sm metal at 133.2K are obtained, respectively.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第11期3103-3106,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No A050314.
关键词 coated conductor buffer layer self-epitaxy CEO2 coated conductor, buffer layer, self-epitaxy, CeO2
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参考文献19

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