摘要
Morphologies of Cu（111） films on Si（111）-7 ×7 surfaces prepared at low temperature are investigated by scanning tunnelling microscopy （STM） and reflection hlgh-energy electron diffraction （RHEED）. At the initial growth stage, Cu films are flat due to the formation of sillclde at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu（111）, on the silicide layer a layer-by-layer growth is observed. The two dimensional （2D） growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rate produces films with different morphologies, which is the result of Ostwald ripening.
Morphologies of Cu（111） films on Si（111）-7 ×7 surfaces prepared at low temperature are investigated by scanning tunnelling microscopy （STM） and reflection hlgh-energy electron diffraction （RHEED）. At the initial growth stage, Cu films are flat due to the formation of sillclde at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu（111）, on the silicide layer a layer-by-layer growth is observed. The two dimensional （2D） growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rate produces films with different morphologies, which is the result of Ostwald ripening.
基金
Supported by the National Basic Research Programme of China under Grant No 2002CB613500, and the National Natural Science Foundation of China under Grant No 90406015.
