量子点异质结中类氢杂质电子束缚能级的计算

Interface effects on the banding energy levels of hydrogenic impurities in quantum dot heterostructures

采用球壳结构和渐变有限深谐振子势阱模型,利用镜像电荷的方法分析了不同介电常数下,界面效应对半导体量子点异质结中类氢杂质电子束缚能级的扰动情况。通过计算考虑到杂质对电子的束缚作用前后的电子的基态能,可以看出对于处在弱受限情况下的量子点,异质结厚度在小于10 nm时,界面效应对类氢杂质电子束缚能级的影响明显.当异质结壳层厚度增大的时候,界面效应的影响将逐渐减弱,受扰动的基态能也逐渐减小,最后不同Airy函数零点值所对应的基态能趋向于某一固定值,此时界面效应可以忽略.

Based on a spherical shell structure and the graded finite potential well model, shifts of bound states caused by the interface effects on the binding energy level of hydrogenic impurities in a weakly-confined spherical semiconductor quantum dot heterostructures are studied. It is found that the interface effects are fairly significant when the shell thickness of the quantum dot is less than or equal to 10 nm. The interface effects become weaker when the thickness of the heterostructures increass, and the ground state energies gradually decrease . Finally the ground state energies corresponding to different values when Aity function becomes zero tend to be a fixed value, then the interface effects can be ignored.