摘要
Optoelectronic characteristics of individual indium-doped tin oxide （In-SnO2） nanowires are investigated by performing transport measurement with UV illumination on/off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Emcient and stable field emission is obtained from In-Sn02 nanowire arrays. The current density is up to 17mA/cm^2 at 3.4 V/μm, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.
Optoelectronic characteristics of individual indium-doped tin oxide （In-SnO2） nanowires are investigated by performing transport measurement with UV illumination on/off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Emcient and stable field emission is obtained from In-Sn02 nanowire arrays. The current density is up to 17mA/cm^2 at 3.4 V/μm, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.
基金
Supported by the Special Fund for Major State Basic Research Project No 2007CB310500, the Ministry of Education of China under Grant No 705040, and the National Natural Science Foundation of China under Grant No 90606009.
