摘要
用射频磁控溅射法在不同温度的Si(001)基片上制备了La0.67Ca0.33MnO3薄膜与银掺杂量为1(mol)%的La0.67Ca0.33MnO3-Ag薄膜,并用四探针法测量其电阻随温度的变化关系。发现由于银以金属形式存在于LCMO薄膜晶界处,使晶界处的电传导特性得以改善,结晶温度降低至773 K以下,晶粒内双交换作用在晶界的传导加强,薄膜金属-绝缘转变温度升高到261 K,并在高温处薄膜的电阻-温度曲线有附加峰的出现。
By RF magnetron sputtering technique, we fabricated La2/3Cal/3MnO3 films and Ag doping La0.67Ca0.33MnO3-mg polycrystalline films on Si single crystal （001） substrates. It was found that as metallic Ag segregating into the grain boundaries, the electrical conductivity at boundaries was improved, the process of double-exchange between adjacent grains became easier, and the films can crystallize at the temperature below 773 K. The metal-insulator transition temperature of our films reaches as high as 261 K, and there are also appendent peaks at the temperature over TMI.
出处
《红外技术》
CSCD
北大核心
2007年第4期222-225,共4页
Infrared Technology
基金
电子科技大学青年基金资助
关键词
掺杂
射频磁控溅射
金属-绝缘转变温度
附加峰
Doping
RF- magnetron sputtering
metal-insulator（MI） transitiom appendent peaks
