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射频溅射CdTe薄膜结构特性分析 被引量:2

Structural Analysis of RF Magnetron Sputtered CdTe Films
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摘要 采用射频磁控溅射技术在玻璃衬底上沉积了CdTe单层薄膜,实验表明:在室温条件下,通过调节溅射功率和溅射氩气压强,沉积的CdTe薄膜显示了一系列结构形态。研究了无CdTe薄膜沉积、非晶CdTe薄膜沉积、晶化CdTe薄膜沉积的生长条件,并采用卢瑟福散射理论解释了溅射CdTe薄膜生长机制的分子动力学过程。 CdTe films deposited onto glass substrates by rf magnetron sputtering were studied. It was observed that when the deposition was performed at a suitable power and Ar air pressure, CdTe films showed a series of different structural properties. The three dash lines were used to describe the three areas of the films without amorphous CdTe films and crystalline CdTe films. The growth dynamic processes was simulated when suitably using Rutherford scatter theory.
机构地区 昆明物理研究所
出处 《红外技术》 CSCD 北大核心 2007年第11期627-629,共3页 Infrared Technology
基金 国家自然科学基金(60576069) 云南省自然科学基金面上项目(2004E0055M)
关键词 射频磁控溅射 非晶CdTe薄膜 XRD 卢瑟福散射理论 RF Magnetron Sputtering amorphous CdTe Films XRD Rutherford Scatter Theory
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参考文献7

  • 1T.L.Chu, S.S.Chu.Thin film-photovoltaics[J]. Solid State Electronics, 1995, 38(3): 533-549.
  • 2P.Capper. Properties of Narrow Gap Cadmium-base on Compounds, London, United Kingdom: the Institution of Electrical Engineers. EMIS datareviews Series No. 10, 1994
  • 3A.A.Ramadan, A.Abd-El Mongy, et al. Thickness-dependence of stoichiometry and microstructure characteristics in correlation with conductivity type of CdTe films[J]. Thin Solid Films, 2003, 423: 146- 152.
  • 4Georgi M.Lalev, Jifeng Wang, et al. Direct growth of CdTe(100) epilayers on Si(100) substrate by hot wall epitaxy[J]. Applied surface Science, 2005, 242:295-303
  • 5T.Okamoto, A.Yamada, M.Konagai. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation[J]. Journal of Crystal Growth, 2000, 214: 1148-1151
  • 6H.Arizpe-Chavez, R Ramirez-Bon, et al. Quantum confinement effects in CdTe nanostructured films prepared by the RF sputtering technique[J]. JoUrnal of Physics and Chemistry of Solids, 2000, 61: 511-518
  • 7孔金丞,孔令德,赵俊,张鹏举,李志,李雄军,王善力,姬荣斌.非晶态碲镉汞薄膜的射频磁控溅射生长及其晶化过程研究[J].红外技术,2007,29(10):559-562. 被引量:9

二级参考文献17

  • 1M.C.Ridgway,C.J.Glover,G.J.Foran.Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements[J].Nuclear lnstmments and Methods in Physics Research B,1999,147:148-154.
  • 2G.Perna,V.Capozzi,M.C.Plantamura.ZnSe films deposited on crystalline GaAs and amorphous quartz substrates by means of pulsed laser ablation techniquelJ].Eur.Phys.J.B,2002,29:541-545.
  • 3Paulo V.Santos,A.R.Zanatta,F.Dondeo.Pulsed laser crystallization and structuring of a-Ge on GaAs[J].Journal of Non-Crystalline Solids.2002.299-302:137-142.
  • 4Alan Owensa,J.F.W.Mosselmans,A.Peacock.Near K-edge linear attenuation coefficients for amorphous and crystalline GaAs[J].Radiation Physics and Chemistry,2003,66:1-6.
  • 5L.Vina,C.Umbach,M.Cardona,et al.Ellipsometric studies of electronic interband transitions in CdxHg1-xTe[J].Phys.Rev.B.,1984,29(12):6752-6760.
  • 6S.Adachi,T.Miyazaki,et.al.Optical properties of amorphous InSb[J].J.Appl.Phys.,1992,71(1):395-371
  • 7汤定元,童斐明.窄基带半导体材料探测器,半导体器件研究与发展(二)[M].北京:科学出版社,1991:1.
  • 8Autoni Rogalski.New ternary Alloys Systems for Infrared Detectors[A].Bellingham,Washington,USA:SPIE Optical Engineering Press[C],1994,1845:313-315.
  • 9J.Bonnet-Gamard,J.Bleuse,N.Magnea,et al.Optical gain and laser emission in HgCdTe heterostmcture[J].J.Appl.phys,1995,78(12):6908-6915.
  • 10Antoni Rogalski.Toward third generation HgCdTe infrared detectors[J].Journal of Alloys and Compounds,2004,371:53-57

共引文献8

同被引文献14

  • 1赵俊,杨玉林,李艳辉,宋立媛,姬荣斌.分子束外延系统束流系综理论分析[J].红外技术,2006,28(8):466-469. 被引量:5
  • 2Roe K J. Kolodzey J. et al. Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors[J]. Appl. Phys. Lett.. 2001,78: 2073.
  • 3Mutze F, Seibel K, Schneider B, et al. UV imager in TFA technology. Presented an at Materials Research Society(MRS) Spring Meeting, San Francisco, 1999
  • 4Wuu D S, Horng R H, Chan C C, et al., Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels[J]. Appl. Surf. Sci., 1999, 144/145:708
  • 5J. Nord, K. Nordlund, J. Keinonen. Molecular dynamics simulation of ion- beam-amorphization of Si, Ge and GaAs[J]. Nuclear Instruments and Methods in Physics Research B, 2002, 193: 294-298.
  • 6Zs. J. Horva'th. Electrical peculiarities in GaAs and Si based low dimensional structures[J]. Current Applied Physics, 2006, (6): 205-211.
  • 7M.C. Ridgway, C. J. Glover, G.J. Foran. Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements[J]. Nuclear Ins- truments and Methods in Physics Research B, 1999, 14/: 148-154.
  • 8G, Perna, V. Capozzi, M.C. Plantamura. ZnSe films deposited on crystalline GaAs and amorphous quartz substrates by means of pulsed laser ablation technique[J]. Eur. Phys. J. B 2002, 29: 541-545.
  • 9Paulo V. Santos, A.R. Zanatta, F. Dondeo. Pulsed laser crystallization and structuring of a-Ge on GaAs[J]. Journal of Non-Crystalline Solids, 2002, 299-302: 137-142.
  • 10Alan Owensa, J.F.W. Mosselmans, A. Peacock. Near K-edge linear attenuation coefficients for amorphous and crystalline GaAs[J]. Radiation Physics and Chemistry, 2003, 66: 1-6.

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