Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas

Metal-ferroelectric-insulator-silicon(MFIS) capacitors with Bi3.15Nd0.85Ti3O12(BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator layer on capacitance-voltage(C-V) hysteresis loops and memory windows were investigated. For the MFIS capacitors with CeO2 insulator,with the increase of applied voltage from 2 V to 15 V,the C-V loops become wider and memory windows increase from 0.15 V to 1.27 V. When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V,the C-V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V. For MFIS capacitors with different insulator layers(CeO2,HfO2,Y2O3,Si3N4 and SiO2),the high dielectric constants can make the C-V loops wider and improve the capacitor's memory window. The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor,and they are helpful to the fabrication of MFIS nonvolatile memory devices.