摘要
A double insulation layer structure organic thin films transistor （OTFT） was investigated for improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as the organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layer is an effective method to fabricate OTPTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on/off ratio were calculated. OTPT based on Si substrate with a field-effect mobility of 4.0 × 10^-3cm^2/Vs and on/off ratio of l0^4 was obtained.
基金
supported by the National Natural ScienceFounda tion of China [No.90202034,No.60477014,and No.60577041]
"973 project"of China [No.2002CB613400]
