摘要
The Indium Tin Oxide films have been prepared at different substrate-temperamre on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10^-1Pa and a deposition rate of 10.2 nrrds. The best ITO films obtained have an electrical resistivity of 4.35 × 10^4 Ω.cm, a carrier concentration of 4,02 × 10^2o cm^-3 and a Hall mobility of 67.5 cm2wlsI. The influence of the substrate-temperamre on the structural, optical and electrical properties of the obtained films has been investigated.
基金
Project of Key Science and Technologyof Tianjin (No.06YFGZGX02100)
Projects of National Key Fun-damental Research Development Plan of China (Nos.2006CB202602, 2006CB202603)
Natural Science Founda-tion of Tianjin (Nos.05YFJMJC01600,06YFJZJC 01700)
