基于电偶电流的铜基材浸镀银工艺设计

Technology Design of Immersion Silver Plating onto Copper Substrate Based on Galvanic Current

利用先进的电化学工作站,通过测定不同工艺条件下的铜银电偶电流-时间曲线,对乙二胺络合体系下铜基材浸镀银的工艺参数进行设计和优化。结果表明:根据电偶电流-时间曲线上是否出现"沉积电流墙"以及残余电偶电流的大小,可以快速、直观地筛选出合适的浸镀银工艺参数。用市售铜箔进行现场浸镀发现,基于电偶电流所设计的浸镀工艺参数(溶液中银离子质量浓度为3g/L,银离子与乙二胺的摩尔比为1∶5,溶液pH值为11.3),可以在铜箔表面浸镀上均匀致密的银镀层。

The technology of immersion silver（I-Ag） plating onto copper substrate in ethylenediamine containing system was designed and optimized with galvanic current curves of Cu-Ag couple under different conditions using an advanced electrochemical station, The results show that optimal technical parameters for I-Ag can be obtained rapidly and directly, according to the shape （ appears wall-like deposition current or not） and the remainder current value on the curve of galvanic current with time. Based on the g^ilvanic current method, a smooth and dense silver coating on copper foil can be prepared （ the silver ion concentration is 3 g/L, molar ratio of silver ion and en is 1： 5, the pH value is 11.3 ）.