摘要
室温条件下,采用磁控溅射法在有机柔性衬底聚酰亚胺(PI)表面制备出ZnO:Ga透明导电膜,XRD表明ZnO:Ga薄膜为六角纤锌矿结构的多晶薄膜。研究了溅射功率、氩气分压、溅射时间及衬底负偏压等溅射工艺参数对薄膜结构及光电性能的影响,得出最佳溅射参数分别为:功率100W,氩气分压0.1Pa,溅射时间60min,衬底负偏压40V。结果表明:磁控溅射制备的ZnO:Ga膜附着性良好,电阻率为9.4×10^(-4)Ω·cm,可见光透过率为78%。
The flexible conducting and transparent gallium doped zinc oxide thin films have been deposited by magnetron sputtering at room temperature on polyimide substrates. The obtained films are polycrystalline with a hexagonal wurtzite structure. The effects of the r.f. power, argon pressure , negative substrate bias and sputtering time on the structural and photoelectric properties of film were presented. The best process parameters were obtained. The r.f. power is around 100W, the sputtering argon pressure is 0.1Pa , the sputtering time is 60min and the negative substrate bias is 40V. The results show that the transmittance in the visible range and the lowest resistivity of the ZnO： Ga films is over 78% and 9. 4 × 10^-4Ω· cm, respectively.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2007年第11期1233-1238,共6页
Acta Energiae Solaris Sinica
基金
江苏大学高级人才科研启动基金项目(04JDG023)
江苏省铝基复合材料工程技术研究中心研发项目(BM2003014)
关键词
光电特性
柔性衬底
磁控溅射
结构
ZnO:Ga膜
electrical and optical properties
flexible substrate
magnetron sputtering
structure
ZnO： Ga films
