Ga的高斯分布对快速晶闸管电学性能的改善

Improvement of the Electricity Properties of Fast Thyristor by Gauss Distribution of Ga

利用开管扩散方式,使Ga在Si中的浓度分布服从高斯函数形式,用于快速晶闸管的制造。由理论与实践得出:P_1,P_2区Ga的缓变分布及其与N_1区低杂质浓度的匹配,有效保证了快速晶闸管较高的正反向耐压特性;器件结构参数设计与Ga分布的突出特点使磷在J_3结处得到一个较大的注入比,同时Ga在短基区获得一个足够高的(?),改善了器件的通态特性和di/dt耐量;使器件dV/dt耐量达到1000 V/μs。可见开管扩Ga是综合提高快速晶闸管器件电学性能及等级合格率的一种新途径。

The concentration distribution of Ga in silicon conform Gauss function by open-tube diffusion method prepare to the thyristor. It is educed from the theory and experiments that the slowly-changed distribution of Ga in P1 and P2 region and its well matching with the low impurity concentration in N1 region ensures higher positive-reverse withstand-voltage characteristic. The biggish afflux ratio of phosphorus round J3 junction is gained by structure parameter design of device and distribution of Ga. At the same time, the higher conductance -↑σ of Ga in short base region improves the on-state characteristic and di/dt capabilities. The dV/dt capabilities reach 1000 V/μs. The open-tube Ga-diffusion is a new approach to improve electricity properties of fast thyristor and grade eligibility ratio.