摘要
研究了Y_2O_3含量对钇稳定氧化锫(YSZ)陶瓷微波介电性能的影响.通过热压烧结方法制备了YSZ陶瓷,对材料进行了X射线衍射分析和复介电常数测量。结果表明,当Y_2O_3含量从2%(摩尔分数)增加到12%时,复介电常数实部在19.49到23.39之间变化。当Y_2O_3含量为6%时,微波损耗达到最大值0.0789。对YSZ陶瓷的微波损耗机理进行了详细探讨,由于氧离子空位随交变电场的震动和移动而产生的漏导电流是电磁波损耗的主要原因。
The effect of Y2O3 content on microwave dielectric property of yttria-stabilized zirconia （YSZ） was investigated YSZ were prepared by hot pressed sintering method. The XRD patterns and the complex dielectric constant were analyzed The experimental data show that real part of the complex dielectric constant varies in the range of 19.49-23.39 when Y2O3 content increases from 2% to 12%. The microwave loss gets the maximum of 0.0789 when 6% Y2O3 is doped. The mechanism of microwave loss of yttria-stabilized zirconia ceramics is discussed in detail, the leakage current aroused by the vibration and the moving of oxygen ion vacancy with the alternate electrical field contributes most to the microwave loss.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A03期623-626,共4页
Rare Metal Materials and Engineering
基金
Supported by the National Natural Science Fund(90305016)
关键词
微波介电
YSZ
损耗
microwave dielectric
YSZ
loss
