摘要
采用近水沸点沉淀和煅烧工艺制备了纳米针状ITO粉末并采用场发射扫描电镜、透射电镜和X射线衍射等手段对ITO粉末进行表征。分析结果表明:ITO前驱体纳米针的直径大体上分布在20 nm~100 nm之间,其长径比主要分布在3~8之间;ITO纳米针的直径主要分布在20 nm~60 nm之间,而其长径比则分布在4~12之间。ITO前驱体针是由相当细长的直径为3 nm~4 nm的纳米丝组成的,且这些纳米丝非常规整的排列成平行于ITO前驱体纳米针的轴向,而ITO纳米针却是由其平坦面垂直于针的轴向的薄片状亚单元组成的。ITO前驱体针是由In(OH)_3和Sn_3O_2(OH)_2组成的,且ITO前驱体针中的纳米丝是沿In(OH)_3的[100]晶向择优取向生长。
ITO nano-aciculae were prepared by calcination of ITO precursor nano-aciculae, which were synthesized by precipitating near water boiling point. ITO precursor nano-aciculae and ITO nano-aciculae were characterized by means of FESEM, TEM and XRD. The cross-sectional diameters of most of ITO nano-aciculae were mainly in the range of 20 to 60 nm, and the aspect ratios were mostly in the range of 4 to 12. ITO precursor nano-aciculae were composed of very subtle nano-wires of 3 to 4 nm in cross-sectional diameter, and the nano-wires were regularly arranged to be parallel to the axial direction of ITO precursor nano-aciculae. However, ITO nano-aciculae were composed of caky subunits (flaky grain) whose flat surfaces were perpendicular to the axial direction. ITO precursor nano-aciculae were composed of In(OH)3 and Sn3[O2(OH)2]2, and the growth of nano-wires in ITO precursor nano-aciculae was along the [100] direction of In(OH)3. ITO nano-aciculae were ITO solid solution being not well-crystallized.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A03期658-660,共3页
Rare Metal Materials and Engineering
基金
国家自然科学基金(50477044)