离子束辅助沉积改善铝薄膜的取向生长

Highly Orientated Al Film Grown on LiNbO_3 by Ion Beam Assisted Deposition

高性能的铝薄膜因具有低的声阻抗而广泛应用于声表面波器件的制备。本文运用Ar离子束辅助沉积技术,在64°Y-X切向的铌酸锂基片上成功的制备出(111)高度取向的铝薄膜,并研究了Ar离子的注入角度对薄膜的织构形成的影响。结果表明,薄膜织构度对辅助离子束入射角度非常敏感,在辅助离子束入射角为35°时,薄膜(111)织构最强,电阻率最小,附着力最好,适合于声表面波器件中的应用。

Highly （ 111 ） orientated A1 fdms were grown on 64° Y-X cut LiNbO3 substrates by Ar ion beam assisted deposition. The A1 films were characterized with scanning electron microscopy（SEM） to understand the influence of LiNbO3 orientation and ion beam incident angle on AI film textures. The results show that the incident angle significantly affects the film quality. For example, at an angle of 35°, AI （ 111 ） is strongly textured with lowest resistivity and the strongest interracial adhesion. We suggest that the films are good surface acoustic wave（SAW） materials.