摘要
分析了传统CMOS带隙基准源电路中三极管VBE电流随温度变化的二阶非线性效应,提出了一种对PTAT二阶温度进行补偿的方法,并在此基础上设计了一个高精度的带隙基准源电路。该电路采用SMIC 0.18μm CMOS工艺实现,具有良好的温度系数和电源抑制比。Cadence Spectre仿真结果表明,该电路在-40~140℃的温度系数为7.7×10^-6/℃,低频时的电源抑制比可达-76dB,基准源电路的供电电压范围为2~4.5V。
The second-order nonlinear effect of the transistor VSE current varying with temperature in the conventional CMOS bandgap reference was analyzed. A curvature compensation method for the proportion to absolute temperature (PTAT) was proposed and a high precision CMOS bandgap reference based on this method was designed. The bandgap referebce was implemented in SMIC 0.18 μm CMOS technology, which had a good temperature coefficient (TC) and a low power supply rejection ration (PSRR). Cadence Spectre simulation result shows that the circuit has an accuracy of 7.7 ×10^-6/℃ at - 40 to 140 % and a power supply rejection ration of - 76 dB at low frequency. The circuit can operate at the range from 2 to 4.5 V.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第12期1082-1085,共4页
Semiconductor Technology
关键词
带隙基准源
曲率补偿
PTAT
自偏
PSRR
温度系数
bandgap reference
curvature-corrected
PTAT
self-bias
PSRR
temperature coefficient.