摘要
采用椭圆偏振光谱(SE)对一系列SiGe样品进行了研究。确定了SixGe1-x层的厚度和组分;对不均匀的SixGe1-x层,沿厚度方向进行了组分梯度的研究,其结果与二次离子质谱(SIMS)的测试有较好的一致性;成功地表征了器件级绝缘体上的硅锗(SGOI)样品的各层结构和SixGe1-x层的组分。
In this work, Spectroscopic Ellipsometry （SE）, which is a detection technology with atomic-level sensitivity, has been used to investigate a series of SiGe samples. The thickness and composition of SixGe1-x layers are detected simultaneously; The composition gradient of non-uniform SixGe1-x layers is investigated along its thickness, and the result is in good agreement with Secondary Ion Mass Spectrometry（SIMS） test. The respective layer structures and composition of SixGe1-x layers of SGOI samples are characterized successfully.
出处
《压电与声光》
CAS
CSCD
北大核心
2007年第6期632-633,637,共3页
Piezoelectrics & Acoustooptics
关键词
SIGE
椭圆偏振光谱
组分
厚度
SiGe
spectroscopic ellipsometry
composition
thickness
