摘要
采用溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO2/Si衬底上制备了Bi4Ti3O12(BTO)铁电薄膜,利用X-射线衍射仪(XRD)和原子力显微镜(AFM)对其晶格结构和表面形貌进行了表征,制备的BTO薄膜具有单一的钙钛矿晶格结构和表面平整致密。对700℃退火的BTO薄膜进行了铁电性能和疲劳特性测试,在测试电压为6 V时,剩余极化值2Pr约为12.5μC/cm2,矫顽电场2Ec约为116.7 kV/cm;经1×109次极化反转后,剩余极化值下降了24%,对其疲劳机理进行了探讨。
The Bi4Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using Sol-Gel method. The structure and morphology of the films were characterized by using X-ray diffractometer and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The Bi4Ti3O12 thin films annealed at 700 ℃ showed 2Pr value of 12.5 μC/cm^2 and 2Ec value of 116.7 kV/cm at an applied voltage of 6 V. After the switching of 1× 10^9 cycles, the remanent polarization value decreased to 76% of its pre-fatigue values. The reason of the poor fatigue is discussed.
出处
《压电与声光》
CSCD
北大核心
2007年第6期683-685,共3页
Piezoelectrics & Acoustooptics
基金
湖北省自然科学基金资助项目(2003ABA061
2004ABA082)