摘要
利用水平、常压有机金属化合物汽相外延（MOVP）装置，DMCd、DIPT及元素汞在约360℃，采用互扩散多层工艺，通过计算机控制，在GaAs、CdTe衬底上按不同条件生长碲化镉、碲化汞和碲镉汞的初步结果，包括组分、表面形态、薄膜厚度、红外透射比和电学特性等，其中有原生的和经过一定条件退火处理的结果。
The paper presents test results of growing CdTe, HgTe and Hg1-xCdx on the GaAs or CdTe substate on different conditions. The results are obtained at 360℃by adopting interactive multilayer diffusion process (IMP) and computer control with horizontal MOVPE device under normal pressure. The metallic, organic sources are Hg, DMCd and DIPT which are both purchased from Epichem Ltd.. Ingredient, sur-face shape, film thickness, IR transmittance and electrical characteristics are discussed.The test and analysis results of ten protogenic or annealed samples are given. It is shown that optimum substrate surface preparation technology including cleaning, corroding,washing and blowing, has been built preliminarily.
出处
《红外与激光工程》
EI
CSCD
1997年第4期45-48,60,共5页
Infrared and Laser Engineering
