摘要
采用真空热蒸发法在玻璃、单晶硅衬底上制备Ce2O3掺杂TiO2薄膜,研究热处理和Ce2O3掺杂对薄膜性能的影响。结果显示,热处理可明显改善薄膜的结构和光学性能,Ce2O3掺杂可降低薄膜晶型转化温度。TiO2薄膜(玻璃衬底)经600℃热处理由锐钛矿转为金红石结构;当掺Ce2O3含量为5at%时热处理温度为500℃薄膜就已开始发生晶型转变。薄膜表面颗粒较均匀,存在程度不同的孔洞和颗粒聚集现象;掺Ce2O3后薄膜表面致密度明显增强。薄膜(玻璃衬底)的光学带隙从3.74 eV降至3.60 eV。
Ce2O3-doped TiO2 thin films were deposited on the glass and monocrystalline silicon substrates through vacuum heat evaporation. The effects of Ce2O3 doping and heat-treatment on the properties of films was studied with XRD and SEM. The results showed that the heat-treatment improves greatly the structural and optical performance of the thin films, while the Ce2O3 doping can lower the transforming temperature of crystal form. The thin film deposited on glass substrate is transformed into rutile structure from anatase when heat-treated at about 600℃. The transformation of crystal form starts when the doped Ce203 content is 5at% and heat-treated at about 500℃. The grains on film surfaces are homogenously distributed with pores and particle aggregation found differently. After Ce2O3 doping the surface compactness of thin film increases obviously. The optical band gap of the thin film deposited on glass substrate decreases from 3.74eV to 3.60eV.
出处
《真空》
CAS
北大核心
2007年第6期52-56,共5页
Vacuum
基金
内蒙古自治区自然科学基金项目(200607010109)
内蒙古自治区高等学校科学研究项目(NJ05030)
