摘要
Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters （per unit length） obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.
Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters （per unit length） obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.
基金
Supported by the National Natural Science Foundation of China (No. 90307016)
the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
