硼对a-Si: H薄膜中氢含量的影响

Effect of Boron Doping on the Hydrogen Content in a Si∶H Thin Films

应用核反应分析法（ＮＲＡ）测量了反应溅射法制备的ａ－ＳｉＨ（Ｂ）薄膜中Ｂ和Ｈ的含量．结果表明：当掺杂比率Ｙｇ（＝［Ｂ２Ｈ２］／（［Ａｒ］＋［Ｈ２］））由１０－６增大到１．４×１０－２时，样品中的硼含量ｃＢ由１．０×１０１８线性增大到１．４×１０２２ａｔｃｍ－３；而氢含量的变化分为三个区域：在微掺硼情况（Ｙｇ＝１０－６），样品中氢含量较未掺硼时高出１０％；当Ｙｇ＝１０－６到１０－３变化时，Ｈ含量ｃＨ由２８％线性减少到１７％；在Ｙｇ＝１０－３时，Ｈ含量达极小值，此后，Ｙｇ增大，Ｈ含量随之增大．

Boron and hydrogen contents of a Si∶H films have been mesured by Nuclear Reaction Analysis (NRA) technique. The results show that when the doping ratio Yg(=/(+)) increase from 10 -6 to 10 -2 , B contents of the films increase monotonously from 1×10 18 at/cm 3 to 1.4×10 22 at/cm 3 and in the case of light B doping, Yg=10 -6 , the hydrogen content is about 10% higher than that in undoped a Si∶H films. When Y g is in the range between 10 -6 and 10 -3 , the hydrogen content decreases from 28% to 17%; at Yg=10 -3 , the hydrogen content reaches its miniumum value, then it increases with the increase of boron atom contents.