低饱和场巨磁电阻金属多层膜Ni_(80)Fe_(20)/Cu的结构与磁电阻

Giant Magnetoresistance Effect and Microstructure for Metallic Multilayers Ni_(80)Fe_(20)/Cu with Low Saturation Field

采用磁控溅射方法，获得了具有低饱和场巨磁电阻的Ni80Fe20／Cu由金属多层膜.在室温下，其磁电阻和层间耦合状态随Cu层厚度的增加呈振荡变化．在Cu层厚度tcu＝1．0nm，2．2nm时磁电阻出现2个峰值分别为19．4％和11．7％，饱和场约为6．4×104A／m和8×103A／m，低温下（77K）磁电阻为对33.2％和27.6％．系统地研究了NiFe层厚度和周期数对多层膜磁电阻的影响．用真空退火方法对样品进行热处理，发现多层膜的磁电阻性能有明显改变．

The [Ni80 Fe20 /Cu] N multilayers with low saturation field and giantmagnetoresistance effect have been successfully prepared by magnetron sputtering method.The oscillatory changes of its magnetoresistance and interlayer exchange coupling with copper thickness increasing have been observed at room temperature while saturation magnetoresistance values reach 19.4 % and 1 1.7 % and saturation fields are approximately 64000 A/m and 8 000 A/m when the Cu layer thickness equals 1 and 2.2 nm respectively.Saturation magnetoresistance values are 33.2 % and 27.6 % at low temperature(77K).Dependence of giant magnetoresistance on microstructUre, including NiFe layer thickness and then number of period N, has been studied systematically. Changes in GMR characteristics have been observed after vacuum annealing.