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干法氧化制备SiGe弛豫缓冲层及其表征 被引量：2

Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation
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摘要 SiGe弛豫缓冲层是高性能Si基光电子与微电子器件集成的理想平台.通过1000℃干法氧化组分均匀的应变Si0.88Ge0.12层,在Si衬底上制备了表面Ge组分大于0.3,弛豫度大于95%,位错密度小于1.2×105cm-2的Ge组分渐变SiGe弛豫缓冲层.通过对不同氧化时间的样品的表征,分析了氧化过程中SiGe应变弛豫的主要机制. An ultra-low dislocation density of 1.2×10^5cm^-2,95% strain relaxed, compositionally graded SiGe layer formed by dry oxidizing the strained Si0.88Ge0.12 alloy on Si （100） substrates at 1000℃ was prepared. By comparing samples with vari-ous oxidation times,the relaxation mechanisms of the strained SiGe layers during the oxidation processes were analyzed.
作者 蔡坤煌 张永 李成 赖虹凯 陈松岩
机构地区 厦门大学物理系半导体光子学研究中心
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1937-1940,共4页 半导体学报（英文版）
基金 国家自然科学基金(批准号:60676027 50672079 60336010) 福建省重点科技项目(批准号:2006H0036) 教育部回国留学人员启动基金资助项目~~
关键词 氧化 锗硅弛豫缓冲层 位错 oxidation SiGe buffer layer dislocation
分类号 TN304 [电子电信—物理电子学]
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参考文献12

  • 1Tezuka T, Sugiyama N, Takagi S. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction. Appl Phys Lett, 2001,79 : 1798.
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同被引文献8

  • 1张苗,狄增峰,刘卫丽,骆苏华,宋志棠,朱剑豪,林成鲁.改进型Ge浓缩技术制备SGOI及其机理[J].Journal of Semiconductors,2006,27(z1):252-256. 被引量：1
  • 2Tezuka T,Sugiyama N,Takagi S. Fabrication of Strained Si on an Ultrathin SiGe-on-Insulator Virtual Substrate with a High-Ge Fraction[J]. Appl. Phys. Lett. , 2001,79(12) : 1798-1800.
  • 3Cai K,Li C,Zhang Yet al, Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer[J]. Applied Surface, Science, 2008,254(17) ; 5363-5366.
  • 4Li C,Cai K,Zhang Y et al. Oxidation Behavior of Strained SiGe Layer on Silicon Substrate in Both Dry and Wet Ambient[J]. J. Electrochem. Soc. , 2008,155 (3) : H156-H159.
  • 5Zhang Y,Cai K. Strain Relaxation in SiGe Layer During Oxidation[J].Appl. Surf. Sci. ,2009,255(6):3701.
  • 6Zhang Y, Cai K, Li C et al. Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method[J]. J. Electrochem. Soc. ,2009,156(2):H115-H118.
  • 7刘旭焱,刘卫丽,马小波,陈超,宋志棠,林成鲁.Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate[J].Chinese Physics Letters,2009,26(11):156-159. 被引量：5
  • 8方春玉,蔡坤煌.氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底[J].光谱实验室,2009,26(6):1516-1518. 被引量：1

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Journal of Semiconductors
2007年 第12期

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