摘要
对Cu(In1-xGax)Se2(CIGS)太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数.采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好.对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因.
J-V characteristics of Cu（GaxIn1-x）Se2 （CIGS）thin film solar cells are measured and analyzed. The diode satura- tion current density J0 ,diode quality factor A ,series resistance Rs and shunt resistance rsh are deduced using Matlab. The calculated results coincide with the measurement very well. A CIGS cell produced in our laboratories is characterized at different illumination intensities. The calculated characteristic parameters are plotted with the irradiance. The shunt resistance rsh decreases as illumination increases. The increased shunt resistance is most likely one of the reasons for the better performance of CIGS solar cells under week illumination.
基金
国家高技术研究发展计划资助项目(批准号:2004AA513020)~~
