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基于RT器件的三值与非门、或非门电路设计 被引量:9

A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices
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摘要 共振隧穿(resonant tunnel,RT)器件本身所具有的微分负阻(negative differential resistance,NDR)特性使其成为天然的多值器件.文中利用RT器件的负阻特性,以开关序列原理为指导,设计了基于RT电路的开关模型,实现了更为简单的三值RT与非门和或非门电路,并利用MOS网络模型,通过SPICE软件仿真验证了所设计电路的正确性.该设计思想可推广到更高值的多值电路设计中. The unique negative differential resistance characteristics lead the RT (resonant tunnel) devices to multiple-valued applications. In this paper,an RT switching circuit model is proposed, ternary NAND and NOR circuits are designed based on the switching sequence theory using RT devices,and they have correct logic certified by the SPICE simulation using MOS net model. This method can be used in other multiple-valued circuits design.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1983-1987,共5页 半导体学报(英文版)
关键词 RT器件 多值逻辑 开关序列 与非门 或非门 RT device multiple-valued logic switching sequence NAND NOR
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参考文献16

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