摘要
比较了不同阴极材料对器件性能的影响,发现阴极材料为ITO/NPB/Alq3/LiF/Al时器件的性能较好,原因是LiF的加入增大了电子的注入能力.当LiF的厚度为1 nm时,器件的性能最佳,其最大亮度为14 700 cd.m-2;发光效率在7 V时最大,为3.117 cd.A-1;电流也较大,使其只需较小的电压就可以达到相同的电流.
The influence of different cathodes on luminescence performance is compared in the paper. The structure of devices is ITO/NPB/Alq3/LiF/Al and the performance is the better, because the insert of LiF layer enhanced the electron injection in the devices, the performance is the best when the thickness of LiF layer is 1 nm. Its maximum brightness is 14 700 cd· m^-2 and maximum luminescent efficiency is 3. 117 cd·A^-1 in 7 V. Current density is larger, which will need little operating voltage.
出处
《陕西科技大学学报（自然科学版）》
2007年第3期43-45,共3页
Journal of Shaanxi University of Science & Technology
基金
国家自然科学基金项目(20476054)
