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测试频率对钕掺杂钛酸铋铁电薄膜极化反转疲劳特性的影响

Effect of measuring frequency on the electric fatigue properties of neodymium-doped Bi_4Ti_3O_(12) films
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摘要 首先介绍了铁电薄膜极化反转疲劳特性测试原理,然后研究了Bi3.54Nd0.46Ti3O12(BNT)铁电薄膜在不同测试频率下的极化反转时的疲劳特性.采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了BNT薄膜,发现其极化反转时的疲劳特性与外加测试频率之间存在着极强的依赖关系.研究表明BNT薄膜抗疲劳特性随测试频率减小而变差.在外加反转电场强度为2倍矫顽场强时,测试频率分别为50 kHz1、00 kHz和1 MHz的情况下,经过6.7×108次极化反转后,薄膜的剩余极化值分别下降了36.1%、16.9%和7.1%.在相同条件下,测试了目前铁电存储器用的PbZr0.52Ti0.48O3(PZT)薄膜的疲劳特性,并与BNT的相比较,发现BNT薄膜的抗疲劳特性要明显优于PZT薄膜.文中对上述实验现象作了初步的解释. The principle to measure the fatigue properties during polarization switching of the ferroelectric films was firstly introduced.Bi3.54Nd0.46Ti3O12(BNT)films on Pt/Ti/SiO2/Si substrate were prepared by a sol-gel process and their electric fatigue properties in different measuring frequency were investigated.Study indicated that the electric fatigue property is strongly dependent on external measuring frequency.Typically,the electric fatigue property of BNT films became worse when the measuring frequency became lower.The remanent polarization of the BNT film decreased by 36.1% when switching cycles are 6.7×108,using a measuring frequency of 50 kHz and a switching electric field twice the coercive field.And the corresponding polarization decreased by 16.9% and 7.1%,while the measuring frequency was 100 kHz and 1 MHz,respectively.Compared with PZT film in the same measuring conditions,the BNT films showed better fatigue properties than the PZT films.
出处 《苏州大学学报(自然科学版)》 CAS 2007年第3期37-41,共5页 Journal of Soochow University(Natural Science Edition)
基金 国家自然科学基金资助项目(10204016)
关键词 Bi3.54Nd0.46Ti3O12薄膜 测试频率 抗疲劳特性 Bi3.54Nd0.46Ti3O12film measuring frequency electric fatigue
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参考文献14

  • 1Hiroshi M,Naoya I,Daichi T,et al.Electromechanical properties of Nd-doped Bi4Ti3O12 films:a candidate for lead-free thin-film piezoelectrics[J].Appl Phys Lett,2003,82(11):1760-1762.
  • 2Takashi H,Naoya I,Daichi T,et al.Excimer UV processing of (Bi,Nd)4Ti3O12 ferroelectric thin films by chemical solution deposition method[J].Jpn J Appl Phys,2003,42(9B):5981-5985.
  • 3Zhong X,Wang J,Zheng J,et al.Structure evolution and ferroelectric and dielectric properties of Bi3.5Nd0.5Ti3O12 thin films under a moderate temperature annealing[J].Appl Phys Lett,2004,85(23):5661-5663.
  • 4Hirofumi M,Masahiro K,Hiroshi U,et al.Structural and electrical properties of polycrystalline Bi4-xNdxTi3O12 ferroelectric thin films with in-plane c-axis orientations[J].Jpn J Appl Phys,2005,44(9):L292-L294.
  • 5Zhong X,Wang J,Zhou Y,et al.Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition[J].J Crystal Growth,2005,277:233-237.
  • 6Lu C,Qiao Y,Qi Y,et al.Large anisotropy of ferroelectric and dielectric properties for Bi3.15Nd0.85Ti3O12 thin films deposited on Pt/Ti/SiO2/Si[J].Appl Phys Lett,200,87(22):2229011-2229013.
  • 7Hou F,Shen M.Crystallization of (Bi,Nd)4Ti3O12 films in N2 environment by chemical solution deposition[J].Appl Phys A,2005,81(6):1249-1252.
  • 8Kim J,Kim S.Ferroelectric properties of Nd-substituted bismuth titanate thin films processed at low temperature[J].Appl Phys A,2005,81(7):1427-1430.
  • 9Lee S,Park B.Microstructure and ferroelectric properties of Nb-doped Bi4Ti3O12 thin films prepared by sol-gel method[J].J Crystal Growth,2005,283:81-86.
  • 10Song M,Rhee S.Deposition of Bi4-xNdxTi3O12 films with direct liquid injection metallorganic chemical vapor deposition and characterization of ferroelectric properties[J].J Electrochem Soc,2006,153(11):G992-G995.

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