摘要
介绍了硅双极型微波功率晶体管的发展历史和应用现状。针对硅脉冲微波功率器件增益退化的失效模式,通过对硅脉冲微波功率器件直流参数的统计分析,初步得出了其失效机理。
In this paper, the development history and application status of silicon microwave pulsed power transistors are presented. With respect to the gain degradation of silicon microwave pulsed power transistors, the failure mechanism is obtained based on the statistical analysis of the DC parameters of the silicon microwave pulsed power transistors.
出处
《电子产品可靠性与环境试验》
2007年第6期4-7,共4页
Electronic Product Reliability and Environmental Testing
基金
电子元器件可靠性物理及其应用技术国家级重点实验室基金项目(9140C030201060C0304)资助
关键词
微波功率晶体管
功率增益
失效机理
退化
microwave power transistor
power gain
failure mechanism
degradation
