摘要
归纳了GaAs PHEMT器件的几种常见失效模式,并从6个方面分析了PHEMT器件的失效机理:热电子应力退化、氢效应、2DEG结构退化、欧姆接触退化、肖特基接触退化和电迁移。
The basic failure modes of GaAs PHEMTs are summarized. Six failure mechanisms are presented, including hot electron degradation, hydrogen effect, the 2DEG structure degradation, ohmic contact degradation, schottky contact degradation and electron migration.
出处
《电子产品可靠性与环境试验》
2007年第6期19-22,共4页
Electronic Product Reliability and Environmental Testing
