以半导体为基的薄膜驻极体电荷重心及电荷密度的测量

Measurement of Charge Depth and Charge Density in the Film Electret on the Basis of Semiconductor

Ｃ－Ｖ（电容－电压）分析法是在半导体技术Ｃ－Ｖ分析法基础上于９０年代发展起来测量膜厚小于２μｍ且具有ＭＯＳ结构的薄膜驻极体电荷重心及电荷密度的新方法。本文描述了Ｃ－Ｖ分析法测量上述薄膜驻极体系统电荷重心和电荷密度的测量原理、实验装置及测量方法。作为其应用，利用Ｃ－Ｖ分析法对经过常温和高温充电及常温充电后热处理的ＳｉＯ２薄膜驻极体的电荷重心迁移及电荷密度的变化规律进行测量，对其实验结果进行了分析讨论。

C-V(Capacitance-Voltage)analyzing method is a new method set up in 90's for measuring mean charge depth and charge density in the film electret(less than 2μm)with MOS structure on the basis of semiconductor.In this Paper,the measuring principle,experimental installation and measuring method of C-V analyzing method for measuring and in the above mentioned film electret system are described.As an application of C-V analyzing method,the shift of mean charge depth and the variation law of charge density of SiO 2 film electret both after charging at room temperature and elevated temperature,and after RT charging and then ageing at heat treatment are measured and their experimental results are discussed. [