面内场对处于直流偏磁场压缩状态下的IID畴壁中布洛赫线链的影响

Influence of Inplane Field on Bloch Line Chains in the Wall of IID Compressed by Static Bias Field

实验研究了面内场Ｈｉｐ对处于直流偏场Ｈｂ压缩状态下ＩＤ畴壁中的垂直布洛赫线（ＶＢＬ）链的影响．发现存在一个阈值直流偏场（Ｈｂ）ｔｈ，当Ｈｂ＜（Ｈｂ）ｔｈ时，使ＩＤ开始转变为ＩＤ、ＯＨＢ和ＳＢ的临界面内场（Ｈｉｐ）ＩＤ、（Ｈｉｐ）ＯＨＢ、（Ｈｉｐ）ＳＢ以及使ＶＢＬ全部解体的临界面内场Ｈ′ｉｐ与Ｈｂ无关．当Ｈｂ＞（Ｈｂ）ｔｈ时。

The influence of inphane field,H ip ,on the vertical Bloch Line(VBL) chains in the wall of IID compressed by static bias filed H b was studied experimently.A threshold bias field,( H b) th was found.When H b<( H b) th ,the critical inplane fields,( H ip ) ID ,( H ip ) OHB ,( H ip ) SB ,above which a few of IIDs transited to IDs,OHBs and SBs and the critical inplane field H ′ ip ,above which all IIDs transited to SBs, are independent on H b.When H b>( H b) th ,the above four critical inplane fields decrease as H b increase,but the decrease degree is different.